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NVD4805N - Power MOSFET

Datasheet Summary

Features

  • Low RDS(on) to Minimize Conduction Losses.
  • Low Capacitance to Minimize Driver Losses.
  • Optimized Gate Charge to Minimize Switching Losses.
  • NVD Prefix for Automotive and Other.

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Datasheet Details

Part number NVD4805N
Manufacturer ON Semiconductor
File Size 108.96 KB
Description Power MOSFET
Datasheet download datasheet NVD4805N Datasheet
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Full PDF Text Transcription

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NTD4805N, NVD4805N Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Applications • CPU Power Delivery • DC−DC Converters • Low Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (RqJA) (Note 1) Power Dissipation (RqJA) (Note 1) Continuous Drain Current (RqJA) (Note 2) Power Dissipation (RqJA) (Note 2) Continuous Drain Current
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