Datasheet4U Logo Datasheet4U.com

NVD4808N - Power MOSFET

Datasheet Summary

Features

  • Low RDS(on) to Minimize Conduction Losses.
  • Low Capacitance to Minimize Driver Losses.
  • Optimized Gate Charge to Minimize Switching Losses.
  • NVD Prefix for Automotive and Other.

📥 Download Datasheet

Datasheet preview – NVD4808N

Datasheet Details

Part number NVD4808N
Manufacturer ON Semiconductor
File Size 108.50 KB
Description Power MOSFET
Datasheet download datasheet NVD4808N Datasheet
Additional preview pages of the NVD4808N datasheet.
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
NTD4808N, NVD4808N Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These are Pb−Free Devices Applications • CPU Power Delivery • DC−DC Converters • Low Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) TA = 25°C TA = 85°C VDSS VGS ID 30 ±20 13.8 10.
Published: |