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NVD4808N - Power MOSFET

Key Features

  • Low RDS(on) to Minimize Conduction Losses.
  • Low Capacitance to Minimize Driver Losses.
  • Optimized Gate Charge to Minimize Switching Losses.
  • NVD Prefix for Automotive and Other.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTD4808N, NVD4808N Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These are Pb−Free Devices Applications • CPU Power Delivery • DC−DC Converters • Low Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) TA = 25°C TA = 85°C VDSS VGS ID 30 ±20 13.8 10.