FCH47N60NF
Overview
- 650 V @ TJ = 150°C
- Typ. RDS(on) = 57.5 mW
- Ultra Low Gate Charge (Typ. Qg = 240 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 420 pF)
- 100% Avalanche Tested
- This Device is Pb-Free and is RoHS Compliant
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| FCH47N60NF | Fairchild Semiconductor | MOSFET |
| FCH47N60 | Fairchild Semiconductor | N-Channel MOSFET |
| FCH47N60F | Fairchild Semiconductor | 600V N-Channel MOSFET |