FDMC007N08LC Description
This N−Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized to minimise on−state resistance and yet maintain superior switching performance with best in class soft body diode.
FDMC007N08LC Key Features
- Shielded Gate MOSFET Technology
- Max RDS(on) = 7.0 mW at VGS = 10 V, ID = 21 A
- Max RDS(on) = 10.4 mW at VGS = 4.5 V, ID = 17 A
- 5 V Drive Capable
- 50% Lower Qrr than Other MOSFET Suppliers
- Lowers Switching Noise / EMI
- MSL1 Robust Package Design
- 100% UIL Tested
- This Device is Pb-Free, Halide Free and RoHS pliant