FDMC010N08C Description
This N−Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized to minimise on−state resistance and yet maintain superior switching performance with best in class soft body diode.
FDMC010N08C Key Features
- Shielded Gate MOSFET Technology
- Max RDS(on) = 10 mW at VGS = 10 V, ID = 16 A
- Max RDS(on) = 25 mW at VGS = 6 V, ID = 8 A
- 50% Lower Qrr than Other MOSFET Suppliers
- Lowers Switching Noise/EMI
- MSL1 Robust Package Design
- 100% UIL Tested
- This Device is Pb-Free, Halide Free and is RoHS pliant
- Primary DC-DC MOSFET
- Synchronous Rectifier in DC-DC and AC-DC