FDMC8327L Description
This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance.
FDMC8327L Key Features
- Max RDS(on) = 9.7 mW at VGS = 10 V, ID = 12 A
- Max RDS(on) = 12.5 mW at VGS = 4.5 V, ID = 10 A
- Low Profile
- 0.8 mm Max in Power 33
- 100% UIL Test
- This Device is Pb-Free, Halide Free and RoHS pliant