FDMS003N08C Description
This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode. 1.0 1 Publication Order Number:.
FDMS003N08C Key Features
- Shielded Gate MOSFET Technology
- Max rDS(on) = 3.1 mΩ at VGS = 10 V, ID = 56 A
- Max rDS(on) = 8.1 mΩ at VGS = 6 V, ID = 28 A
- 50% lower Qrr than other MOSFET suppliers
- Lowers switching noise/EMI
- MSL1 robust package design
- 100% UIL tested
- RoHS pliant