FDMS007N08LC Description
This N−Channel MV MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized to minimize on−state resistance and yet maintain superior switching performance with best in class soft body diode.
FDMS007N08LC Key Features
- Shielded Gate MOSFET Technology
- Max rDS(on) = 6.7 mW at VGS = 10 V, ID = 21 A
- Max rDS(on) = 9.9 mW at VGS = 4.5 V, ID = 17 A
- 50% Lower Qrr than Other MOSFET Suppliers
- Lowers Switching Noise/EMI
- MSL1 Robust Package Design
- 100% UIL Tested
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS