FDMS4D0N12C Description
MOSFET - Power, Single N-Channel, PQFN8 120 V, 4.0 mW, 114 A FDMS4D0N12C.
FDMS4D0N12C Key Features
- Small Footprint (5x6 mm) for pact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- These are Pb-free, Halogen Free / BFR Free and are RoHS