FQA6N90C-F109 Description
This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic...
FQA6N90C-F109 Key Features
- 6 A, 900 V, RDS(on) = 2.3 Ω (Max.) @ VGS = 10 V, ID = 3 A
- Low Gate Charge (Typ. 30 nC)
- Low Crss (Typ. 11 pF)
- 100% Avalanche Tested
- RoHS pliant