HGTG30N60A4
Description
The HGTG30N60A4 bines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
Key Features
- 60 A, 600 V @ TC = 110°C
- Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 30 A
- Typical Fall Time: 58 ns at TJ = 125°C
- Low Conduction Loss
- This is a Pb-Free Device
