NTMD4102PR2 Description
NTMD4102PR2 Product Preview Trench Power MOSFET -20 V, P-Channel, SO-8 Dual This P-Channel device was designed using ON Semiconductor’s leading edge trench technology for low RDS(on) performance in the SO-8 dual package for high power and current handling capability. The low RDS(on) performance is particularly suited for game systems, notebook and desktop puters, and printers.
NTMD4102PR2 Key Features
- Leading -20 V Trench for Low RDS(on)
- SO-8 Package Provides Excellent Thermal Performance
- Surface Mount SO-8 Package Saves Board Space
- Pb Free Package for Green Manufacturing