The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Transistors www.DataSheet4U.com
2SB1734
Silicon PNP epitaxial planar type
For general amplification Complementary to 2SD2706 ■ Features
• High forward current transfer ratio hFE • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing.
Unit: mm
0.40+0.10 –0.05 3
1.50+0.25 –0.05 2.8+0.2 –0.3
0.16+0.10 –0.06
1
2
(0.65)
(0.95) (0.95)
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −50 −50 −5 −200 −400 200 150 −55 to +150 Unit V V V mA mA mW °C °C
10˚
1.9±0.1 2.90+0.20 –0.