2SB779 - Silicon PNP Transistor

Panasonic

Key Features

q q q 2.8.
0.3 0.65±0.15 +0.2 +0.25 1.5.
0.05 0.65±0.15 2 1.1.
0.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings.
25.
20.
7.
1.
0.5 200 150.
55 ~ +150 Unit V V V A A mW ˚C ˚C 1:Base 2:Emitter 3:Collector JEDEC:TO.

2SB779 silicon pnp transistor by Panasonic - Datasheet Preview

Datasheet Details

Part number	2SB779
Manufacturer	Panasonic
File Size	36.23 KB
Description	Silicon PNP Transistor
Datasheet	2SB779 Datasheet

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Other Datasheets by Panasonic

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Transistor 2SB779 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm s Features q q q 2.8 –0.3 0.65±0.15 +0.2 +0.25 1.5 –0.05 0.65±0.15 2 1.1 –0.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –25 –20 –7 –1 – 0.