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2SB779 - Silicon PNP Transistor

Datasheet Summary

Features

  • q q q 2.8.
  • 0.3 0.65±0.15 +0.2 +0.25 1.5.
  • 0.05 0.65±0.15 2 1.1.
  • 0.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings.
  • 25.
  • 20.
  • 7.
  • 1.
  • 0.5 200 150.
  • 55 ~ +150 Unit V V V A A mW ˚C ˚C 1:Base 2:Emitter 3:Collector JEDEC:TO.

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Datasheet Details

Part number 2SB779
Manufacturer Panasonic Semiconductor
File Size 36.23 KB
Description Silicon PNP Transistor
Datasheet download datasheet 2SB779 Datasheet
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Full PDF Text Transcription

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Transistor 2SB779 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm s Features q q q 2.8 –0.3 0.65±0.15 +0.2 +0.25 1.5 –0.05 0.65±0.15 2 1.1 –0.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –25 –20 –7 –1 – 0.
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