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2SB790 - Silicon PNP Transistor

Key Features

  • q q 1.5 0.4 1.5 R0.9 R0.9 Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.0±0.1 R 0. 0.85 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚.

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Datasheet Details

Part number 2SB790
Manufacturer Panasonic
File Size 37.87 KB
Description Silicon PNP Transistor
Datasheet download datasheet 2SB790 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistor 2SB790 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD969 6.9±0.1 2.5±0.1 1.0 1.0 2.4±0.2 2.0±0.2 3.5±0.1 Unit: mm s Features q q 1.5 0.4 1.5 R0.9 R0.9 Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.0±0.1 R 0. 0.85 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings –25 –20 –7 –1 – 0.5 600 150 –55 ~ +150 Unit V V V A A mW ˚C ˚C 1:Base 2:Collector 3:Emitter 3 0.55±0.