q q
0.65 max. 1.0 1.0
High collector to base voltage VCBO. High emitter to base voltage VEBO. 0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature.
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Transistor
2SC5018
Silicon NPN triple diffusion planer type
For high breakdown voltage high-speed switching
Unit: mm
6.9±0.1
0.15
1.05 2.5±0.1 ±0.05
(1.45) 0.8
0.5 4.5±0.1
0.7
4.0
s Features
q q
0.65 max.
1.0 1.0
High collector to base voltage VCBO. High emitter to base voltage VEBO.
0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
(Ta=25˚C)
Ratings 500 400 7 1.5 0.8 1 150 –55 ~ +150 1cm2 Unit
0.45–0.05
0.45–0.05
+0.1
+0.1
Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg
2.5±0.5 1 2
2.5±0.5 3
V V A A W ˚C ˚C
1.2±0.1 0.65 max.
0.1 0.45+ – 0.
2SC5018 Datasheet
