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2SC5019 - NPN Transistor

Key Features

  • 1.6±0.2 1.5±0.1.
  • Low noise figure NF 2.5±0.1 3˚ 4.0.
  • +00..2205.
  • High maximum unilateral power gain GUM.
  • High transition frequency fT.
  • Mini Power type package, allowing downsizing of the equip- ment and automatic insertion through the tape packing and the magazine packing 1 0.4±0.08 1.5±0.1 23 0.5±0.08 3˚ 1.0.
  • +00..21 0.4±0.04 /.
  • Absolute Maximum Ratings Ta = 25°C e e) Parameter Symbol Rating Unit 2.6±0.1 0.4 max. c e. d t.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistors 2SC5019 Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit: mm 4.5±0.1 ■ Features 1.6±0.2 1.5±0.1 • Low noise figure NF 2.5±0.1 3˚ 4.0–+00..2205 • High maximum unilateral power gain GUM • High transition frequency fT • Mini Power type package, allowing downsizing of the equip- ment and automatic insertion through the tape packing and the magazine packing 1 0.4±0.08 1.5±0.1 23 0.5±0.08 3˚ 1.0–+00..21 0.4±0.04 / ■ Absolute Maximum Ratings Ta = 25°C e e) Parameter Symbol Rating Unit 2.6±0.1 0.4 max. c e.