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Power Transistors
2SD1252, 2SD1252A
Silicon NPN triple diffusion planar type
For power amplification Complementary to 2SB929 and 2SB929A
s Features
q High forward current transfer ratio hFE which has satisfactory linearity q Low collector to emitter saturation voltage VCE(sat) q N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SD1252 base voltage 2SD1252A
VCBO
60 80
V
Collector to 2SD1252 emitter voltage 2SD1252A
VCEO
60 80
V
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO ICP IC
PC
6 5 3 35 1.
2SD1252A Datasheet
