Built-in 60 V Zener diode between base to collector
φ 3.16±0.1
3.8±0.3 11.0±0.5
1.9±0.1.
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Tj Tstg TC = 25°C Symbol VCBO VCEO VEBO IC ICP PC Rating
25 60 +.
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Power Transistors
2SD2018
Silicon NPN epitaxial planar type darlington
For low-frequency amplification
8.0+0.5 –0.1
Unit: mm
3.2±0.2
■ Features
• High forward current transfer ratio hFE • Built-in 60 V Zener diode between base to collector
φ 3.16±0.1
3.8±0.3 11.0±0.5
1.9±0.1
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Tj Tstg TC = 25°C Symbol VCBO VCEO VEBO IC ICP PC Rating
25 60 + −10 +25 60 −10
Unit V V V A A W °C °C
B
1 2 3 0.75±0.1 4.6±0.2
5 1 1.5 1.2 5.0 150 −55 to +150
0.5±0.1 0.5±0.1 2.3±0.2 1.76±0.1
16.0±1.
2SD2018 Datasheet
