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2SD2018 Datasheet Silicon NPN Transistor

Manufacturer: Panasonic

Overview: Power Transistors 2SD2018 Silicon NPN epitaxial planar type darlington For low-frequency amplification 8.0+0.5 –0.1 Unit: mm 3.2±0.

Key Features

  • High forward current transfer ratio hFE.
  • Built-in 60 V Zener diode between base to collector φ 3.16±0.1 3.8±0.3 11.0±0.5 1.9±0.1.
  • Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Tj Tstg TC = 25°C Symbol VCBO VCEO VEBO IC ICP PC Rating 25 60 +.

2SD2018 Distributor