Overview: Transistor 2SD2074
Silicon NPN epitaxial planer type
For low-frequency output amplification For muting For DC-DC converter
Unit: mm
6.9±0.1
0.15 1.05 2.5±0.1 ±0.05 (1.45) 0.8
0.5 4.5±0.1 0.7 4.0 q q q 0.45–0.05
0.45–0.05
+0.1 +0.1 2.5±0.5 2.5±0.5 2 3 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
* Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 25 20 12 1 0.5 1 150 –55 ~ +150 Unit V V V A A W ˚C ˚C
0.1 0.45+ – 0.05 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT2 Type Package 1.2±0.1 0.65 max. Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion 2.5±0.1 s Absolute Maximum Ratings (Ta=25˚C) 1 (HW type) s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance ON resistanse (Ta=25˚C)
Symbol ICBO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) VBE(sat) fT Cob Ron*3
*3R on Conditions VCB = 25V, IE = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 2V, IC = 0.5A*2 VCE = 2V, IC = 1A*2 IC = 0.5A, IB = 20mA IC = 0.5A, IB = 50mA VCB = 10V, IE = –50mA, f = 200MHz VCB = 10V, IE = 0, f= 1MHz min typ max 100 14.5±0.5 q Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. Allowing supply with the radial taping. 0.65 max. 1.0 1.
