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2SD2074 - Silicon NPN Transistor

Key Features

  • 0.2 Unit nA V V V 25 20 12 200 60 0.13 0.4 1.2 200 10 1.0 800 V V MHz pF Ω Measurement circuit 1kΩ.
  • 2 Pulse measurement.
  • 1h FE1 Rank classification R 200 ~ 350 S 300 ~ 500 T 400 ~ 800 IB=1mA f=1kHz V=0.3V Rank hFE1 VB VV VA VB Ron= !1000(Ω) VA.
  • VB 1 Transistor PC.
  • Ta 1.2 1.2 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. IB=4.0mA 1.0 Ta=25˚C 3.5mA 3.0mA 0.8 2.5mA 2.0mA 0.6 1.5mA 0.4 1.0.

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Datasheet Details

Part number 2SD2074
Manufacturer Panasonic
File Size 44.09 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD2074 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistor 2SD2074 Silicon NPN epitaxial planer type For low-frequency output amplification For muting For DC-DC converter Unit: mm 6.9±0.1 0.15 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.5 4.5±0.1 0.7 4.0 q q q 0.45–0.05 0.45–0.05 +0.1 +0.1 2.5±0.5 2.5±0.5 2 3 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 25 20 12 1 0.5 1 150 –55 ~ +150 Unit V V V A A W ˚C ˚C 0.1 0.45+ – 0.05 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT2 Type Package 1.2±0.1 0.65 max.