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2SD2416 - Silicon NPN Transistor

Key Features

  • q q q q 4.5±0.1 1.6±0.2 1.5±0.1 High foward current transfer ratio hFE. 60V zener diode built in between collector and base. Darlington connection. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.6±0.1 0.4max. 45° 1.0.
  • 0.2 +0.1 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 3 2 1 4.0.
  • 0.20 0.4±0.04 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emi.

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Datasheet Details

Part number 2SD2416
Manufacturer Panasonic
File Size 51.85 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD2416 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistor 2SD2416 Silicon NPN epitaxial planer type darlington For low-frequency amplification Unit: mm s Features q q q q 4.5±0.1 1.6±0.2 1.5±0.1 High foward current transfer ratio hFE. 60V zener diode built in between collector and base. Darlington connection. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.6±0.1 0.4max. 45° 1.0–0.2 +0.1 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 3 2 1 4.0–0.20 0.4±0.