Datasheet Summary
Transistor
Silicon NPN epitaxial planer type darlington
For low-frequency amplification
Unit: mm s Features q q q q
4.5±0.1 1.6±0.2
1.5±0.1
High foward current transfer ratio hFE. 60V zener diode built in between collector and base. Darlington connection. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
2.6±0.1
0.4max.
45°
1.0- 0.2
+0.1
0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 3 2 1
4.0- 0.20
0.4±0.04 s...