High forward current transfer ratio hFE: 2 000 to 10 000.
Dielectric breakdown voltage of the package: > 5 kV
9.9±0.3
3.0±0.5
4.6±0.2 2.9±0.2
13.7±0.2 4.2±0.2 Solder Dip
15.0±0.5
φ 3.2±0.1
I Absolute Maximum Ratings TC = 25°C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation TC = 25°C Ta = 25°C Tj Tstg Symbol VCBO VCEO VEBO ICP IC PC Rating 60 60 5 8 4 40 2.0 150.
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Power Transistors
2SD2420
Silicon NPN triple diffusion planer type Darlington
Unit: mm
For power amplification I Features
• High forward current transfer ratio hFE: 2 000 to 10 000 • Dielectric breakdown voltage of the package: > 5 kV
9.9±0.3
3.0±0.5
4.6±0.2 2.9±0.2
13.7±0.2 4.2±0.2 Solder Dip
15.0±0.5
φ 3.2±0.1
I Absolute Maximum Ratings TC = 25°C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation TC = 25°C Ta = 25°C Tj Tstg Symbol VCBO VCEO VEBO ICP IC PC Rating 60 60 5 8 4 40 2.0 150 −55 to +150 °C °C Unit V V V A A W
1.4±0.2 1.6±0.2 0.8±0.1
2.6±0.1
0.55±0.15
2.54±0.30 5.08±0.
2SD2420 Datasheet