Panasonic 2SD1819A
Silicon NPN epitaxial planer type Transistor
FEATURES
q q q 0.425 1.25±0.1 0.425 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.65 1 2.0±0.2 1.3±0.1 0.65 3 2 0.9±0.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 60 50 7 200 100 150 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 0.7±0.1 0 to 0.1 0.2±0.1 1:Base 2:Emitter 3:Collector EIAJ:SC–70 S–Mini Type Package Marking symbol : Z sELECTRICAL CHARACTERISTICS
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance *h (Ta=25˚C) Symbol I...