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MA3J745 - Silicon epitaxial planar type

Key Features

  • % Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc. ). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 2 000 MHz 3.
  • : trr measuring instrument Bias.

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Datasheet Details

Part number MA3J745
Manufacturer Panasonic
File Size 43.79 KB
Description Silicon epitaxial planar type
Datasheet download datasheet MA3J745 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Diodes (SBD) MA3J745 Silicon epitaxial planar type Unit : mm For switching circuits 0.425 2.1 ± 0.1 1.25 ± 0.1 0.425 + 0.1 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 1 3 2 • Optimum for low-voltage rectification because of its low forward rise voltage (VF) (Low VF type of MA3X704A) • Optimum for high-frequency rectification because of its short reverse recovery time (trr) I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Junction temperature Storage temperature Symbol VR VRM IF IFM Tj Tstg Rating 30 30 30 150 125 −55 to +125 Unit V V mA mA °C °C 0.9 ± 0.