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MA3J745 - Silicon epitaxial planar type

Features

  • % Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc. ). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 2 000 MHz 3.
  • : trr measuring instrument Bias.

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Datasheet Details

Part number MA3J745
Manufacturer Panasonic
File Size 43.79 KB
Description Silicon epitaxial planar type
Datasheet download datasheet MA3J745 Datasheet
Additional preview pages of the MA3J745 datasheet.

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Full PDF Text Transcription

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Schottky Barrier Diodes (SBD) MA3J745 Silicon epitaxial planar type Unit : mm For switching circuits 0.425 2.1 ± 0.1 1.25 ± 0.1 0.425 + 0.1 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 1 3 2 • Optimum for low-voltage rectification because of its low forward rise voltage (VF) (Low VF type of MA3X704A) • Optimum for high-frequency rectification because of its short reverse recovery time (trr) I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Junction temperature Storage temperature Symbol VR VRM IF IFM Tj Tstg Rating 30 30 30 150 125 −55 to +125 Unit V V mA mA °C °C 0.9 ± 0.
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