MA3J745E - Silicon epitaxial planar type

Panasonic

Key Features

1 MA3J745E IF  V F 103 1.0 Schottky Barrier Diodes (SBD) VF  Ta 104 Ta = 125°C 0.8 IR  VR 102 75°C 25°C.
20°C Forward current IF (mA) Forward voltage VF (V) Reverse current IR (µA) Ta = 125°C 103 IF = 30 mA 75°C 102 10 0.6 10 mA 0.4 1 10 25°C 10.
1 0.2 1 mA 1 10.
2 0 0.4 0.8 1.2 1.6 2.0 2.4 0.
40 10.
1 0 40 80 120 160 0 5 10 15 20 25 30 Forward voltage VF (V) Ambient temperature Ta (°C) Reverse voltage VR (V) Ct .

MA3J745E silicon epitaxial planar type by Panasonic - Datasheet Preview

Datasheet Details

Part number	MA3J745E
Manufacturer	Panasonic
File Size	46.41 KB
Description	Silicon epitaxial planar type
Datasheet	MA3J745E Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
MA3000	MA3000	ETC
MA3005	MA3005	ETC
MA3006	MA3006	ETC
MA3054	Fast Transient Low Dropout Regulator	Major Power Technology
MA3056	Fast Transient Low Dropout Regulator	Major Power Technology

Other Datasheets by Panasonic

Part Number	Description
MA3J745	Silicon epitaxial planar type
MA3J745D	Silicon epitaxial planar type
MA3J741	Silicon epitaxial planar type
MA3J741D	Silicon epitaxial planar type
MA3J741E	Silicon epitaxial planar type

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Schottky Barrier Diodes (SBD) MA3J745E Silicon epitaxial planar type Unit : mm For switching circuits 0.425 2.1 ± 0.1 1.25 ± 0.1 0.425 + 0.1 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Single Double* Single Double* Tj Tstg IFM Symbol VR VRM IF Rating 30 30 30 20 150 110 125 −55 to +125 °C °C mA Unit V V mA 0.9 ± 0.