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MA3J745E - Silicon epitaxial planar type

Features

  • 1 MA3J745E IF  V F 103 1.0 Schottky Barrier Diodes (SBD) VF  Ta 104 Ta = 125°C 0.8 IR  VR 102 75°C 25°C.
  • 20°C Forward current IF (mA) Forward voltage VF (V) Reverse current IR (µA) Ta = 125°C 103 IF = 30 mA 75°C 102 10 0.6 10 mA 0.4 1 10 25°C 10.
  • 1 0.2 1 mA 1 10.
  • 2 0 0.4 0.8 1.2 1.6 2.0 2.4 0.
  • 40 10.
  • 1 0 40 80 120 160 0 5 10 15 20 25 30 Forward voltage VF (V) Ambient temperature Ta (°C) Reverse voltage VR (V) Ct .

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Datasheet Details

Part number MA3J745E
Manufacturer Panasonic
File Size 46.41 KB
Description Silicon epitaxial planar type
Datasheet download datasheet MA3J745E Datasheet
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Full PDF Text Transcription

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Schottky Barrier Diodes (SBD) MA3J745E Silicon epitaxial planar type Unit : mm For switching circuits 0.425 2.1 ± 0.1 1.25 ± 0.1 0.425 + 0.1 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Single Double* Single Double* Tj Tstg IFM Symbol VR VRM IF Rating 30 30 30 20 150 110 125 −55 to +125 °C °C mA Unit V V mA 0.9 ± 0.
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