Optimum for low-voltage rectification because of its low forward rise voltage (VF).
Optimum for high-frequency rectification because of its short reverse recovery time (trr)
2.1 ± 0.1 0.425 1.25 ± 0.1 0.425
+ 0.1
2.0 ± 0.2 1.3 ± 0.1 0.65 0.65
1 3 2
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Single Double.
Single Double.
Tj Tstg IFM Symbol VR VRM IF Rating 30 30 30 20 150 110 125.
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Schottky Barrier Diodes (SBD)
MA3J745D
Silicon epitaxial planar type
Unit : mm
For switching circuits I Features
• Optimum for low-voltage rectification because of its low forward rise voltage (VF) • Optimum for high-frequency rectification because of its short reverse recovery time (trr)
2.1 ± 0.1 0.425 1.25 ± 0.1 0.425
+ 0.1
2.0 ± 0.2 1.3 ± 0.1 0.65 0.65
1 3 2
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Single Double* Single Double* Tj Tstg IFM Symbol VR VRM IF Rating 30 30 30 20 150 110 125 −55 to +125 °C °C mA Unit V V mA
0.9 ± 0.
MA3J745D Datasheet
