MA3J745D Datasheet PDF (Silicon epitaxial planar type)

MA3J745D - Silicon epitaxial planar type

Features

Optimum for low-voltage rectification because of its low forward rise voltage (VF).
Optimum for high-frequency rectification because of its short reverse recovery time (trr) 2.1 ± 0.1 0.425 1.25 ± 0.1 0.425 + 0.1 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 1 3 2 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Single Double.
Single Double.
Tj Tstg IFM Symbol VR VRM IF Rating 30 30 30 20 150 110 125.

Datasheet Details

Part number	MA3J745D
Manufacturer	Panasonic
File Size	44.43 KB
Description	Silicon epitaxial planar type
Datasheet	MA3J745D Datasheet
Additional preview pages of the MA3J745D datasheet.

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Full PDF Text Transcription

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Schottky Barrier Diodes (SBD) MA3J745D Silicon epitaxial planar type Unit : mm For switching circuits I Features • Optimum for low-voltage rectification because of its low forward rise voltage (VF) • Optimum for high-frequency rectification because of its short reverse recovery time (trr) 2.1 ± 0.1 0.425 1.25 ± 0.1 0.425 + 0.1 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 1 3 2 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Single Double* Single Double* Tj Tstg IFM Symbol VR VRM IF Rating 30 30 30 20 150 110 125 −55 to +125 °C °C mA Unit V V mA 0.9 ± 0.

Published: Apr 27, 2005 |