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MA3S795 - Silicon epitaxial planar type

Features

  • Extra-small SS-mini type 3-pin package, allowing high-density mounting.
  • Optimum for low-voltage rectification because of its low forward rise voltage (VF) (Low VF type of MA3X704A).
  • Optimum for high-frequency rectification because of its short reverse recovery time (trr) 1.60.
  • 0.03 0.80 0.80 0.51 0.51 0.80 1.60 ± 0.1 0.80 ± 0.05 Unit : mm 1 + 0.05 3 2 0.28 ± 0.05 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) For switching circuit.

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Datasheet Details

Part number MA3S795
Manufacturer Panasonic
File Size 46.55 KB
Description Silicon epitaxial planar type
Datasheet download datasheet MA3S795 Datasheet

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Full PDF Text Transcription

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Schottky Barrier Diodes (SBD) MA3S795 Silicon epitaxial planar type 0.28 ± 0.05 For switching circuits I Features • Extra-small SS-mini type 3-pin package, allowing high-density mounting • Optimum for low-voltage rectification because of its low forward rise voltage (VF) (Low VF type of MA3X704A) • Optimum for high-frequency rectification because of its short reverse recovery time (trr) 1.60 − 0.03 0.80 0.80 0.51 0.51 0.80 1.60 ± 0.1 0.80 ± 0.05 Unit : mm 1 + 0.05 3 2 0.28 ± 0.05 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) For switching circuits Forward current (DC) Peak forward current Junction temperature Storage temperature Symbol VR VRM IF IFM Tj Tstg Rating 30 30 30 150 125 −55 to +125 Unit V V mA mA °C °C 0.60 − 0.03 0.44 0.44 + 0.05 0.88 − 0.
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