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MA3S795D - Schottky Barrier Diodes (SBD)

Features

  • High-density mounting is possible.
  • Low forward voltage VF , optimum for low voltage rectification: VF < 0.3 V (at IF = 1 mA).
  • Optimum for high frequency rectification because of its short reverse recovery time (trr).
  • SS-Mini type 3-pin package 0.28±0.05 Unit: mm 0.12+0.05.
  • 0.02 (0.44) 3° (0.44) 3 1 2 3 1.60±0.05 (0.80) 1 2 (0.51) (0.80) (0.80) 1.60+0.05.
  • 0.03 3° 0.28±0.05 (0.51) 0.60+0.05.
  • 0.03 0 to 0.1 Parameter Reverse voltag.

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Datasheet Details

Part number MA3S795D
Manufacturer Panasonic
File Size 70.84 KB
Description Schottky Barrier Diodes (SBD)
Datasheet download datasheet MA3S795D Datasheet

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Full PDF Text Transcription

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Schottky Barrier Diodes (SBD) MA3S795D, MA3S795E (MA795WA, MA795WK) Silicon epitaxial planar type 0.80±0.05 For switching I Features • High-density mounting is possible • Low forward voltage VF , optimum for low voltage rectification: VF < 0.3 V (at IF = 1 mA) • Optimum for high frequency rectification because of its short reverse recovery time (trr) • SS-Mini type 3-pin package 0.28±0.05 Unit: mm 0.12+0.05 –0.02 (0.44) 3° (0.44) 3 1 2 3 1.60±0.05 (0.80) 1 2 (0.51) (0.80) (0.80) 1.60+0.05 –0.03 3° 0.28±0.05 (0.51) 0.60+0.05 –0.03 0 to 0.
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