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MA3S781 - Silicon epitaxial planar type

Features

  • 1608 type diode contained in the (SS-mini) package.
  • Surface mounting, allowing high-density mounting.
  • Optimum for high-frequency rectification because of its short reverse recovery time (trr).
  • Low VF (forward rise voltage), with high rectification efficiency 0.80 1.60 ± 0.1 0.80 ± 0.05 1.60.
  • 0.03 0.80 0.80 0.51 0.51 1 + 0.05 3 2 Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Junction temperature.

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Datasheet Details

Part number MA3S781
Manufacturer Panasonic
File Size 46.90 KB
Description Silicon epitaxial planar type
Datasheet download datasheet MA3S781 Datasheet

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Full PDF Text Transcription

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Schottky Barrier Diodes (SBD) MA3S781 Silicon epitaxial planar type Unit : mm 0.28 ± 0.05 For the switching circuit I Features • 1608 type diode contained in the (SS-mini) package • Surface mounting, allowing high-density mounting • Optimum for high-frequency rectification because of its short reverse recovery time (trr) • Low VF (forward rise voltage), with high rectification efficiency 0.80 1.60 ± 0.1 0.80 ± 0.05 1.60 − 0.03 0.80 0.80 0.51 0.51 1 + 0.05 3 2 Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Junction temperature Storage temperature Symbol VR VRM IF IFM Tj Tstg Rating 30 30 30 150 125 −55 to +125 Unit V V mA mA °C °C 0.60 − 0.03 0.44 0.44 + 0.05 1 : Cathode 2 : NC 3 : Anode SS-Mini Type Package (3-pin) 0.88 − 0.
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