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MA3S781E - Silicon epitaxial planar type (cathode common)

Features

  • SS-mini type 3-pin package.
  • Allowing high-density mounting.
  • Cathode common type 1.60 ± 0.1 0.80 0.80 ± 0.05 1.60.
  • 0.03 0.80 0.80 0.51 0.51 1 + 0.05 3 2 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage Average forward current Peak forward current Single Double Single Double Tj Tstg IFM Symbol VR VRM IF Rating 30 30 30 20 150 110 125.
  • 55 to +125 °C °C mA Unit V V mA 0.60.
  • 0.03 + 0.05 0.28 ± 0.05.

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Datasheet Details

Part number MA3S781E
Manufacturer Panasonic
File Size 45.87 KB
Description Silicon epitaxial planar type (cathode common)
Datasheet download datasheet MA3S781E Datasheet

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Full PDF Text Transcription

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Schottky Barrier Diodes (SBD) MA3S781E Silicon epitaxial planar type (cathode common) Unit : mm 0.28 ± 0.05 For high-speed switching circuits I Features • SS-mini type 3-pin package • Allowing high-density mounting • Cathode common type 1.60 ± 0.1 0.80 0.80 ± 0.05 1.60 − 0.03 0.80 0.80 0.51 0.51 1 + 0.05 3 2 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage Average forward current Peak forward current Single Double Single Double Tj Tstg IFM Symbol VR VRM IF Rating 30 30 30 20 150 110 125 −55 to +125 °C °C mA Unit V V mA 0.60 − 0.03 + 0.05 0.28 ± 0.05 0.44 0.44 + 0.05 1 : Anode 1 2 : Anode 2 3 : Cathode SS-Mini Type Package (3-pin) 0.88 − 0.
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