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MA3S781D - Silicon epitaxial planar type

Features

  • SS-mini type 3-pin package.
  • Allowing high-density mounting.
  • Anode common type 1 + 0.05 3 2 I Absolute Maximum Ratings Ta = 25°C Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Single Double Single Double Tj Tstg IFM VR VRM IF 30 30 30 20 150 110 125.
  • 55 to +125 °C °C mA V V mA 0.60.
  • 0.03 + 0.05 0.44 0.44 + 0.05 0.88.
  • 0.03 1 : Cathode 1 3 : Anode 1 2 : Cathode 2 Anode 2 SS-Mini Type Package (3-pin).

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Datasheet Details

Part number MA3S781D
Manufacturer Panasonic
File Size 45.72 KB
Description Silicon epitaxial planar type
Datasheet download datasheet MA3S781D Datasheet

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Full PDF Text Transcription

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Schottky Barrier Diodes (SBD) MA3S781D Silicon epitaxial planar type Unit : mm 0.28 ± 0.05 For high-speed switching circuits 1.60 − 0.03 0.80 0.80 0.51 0.51 0.80 1.60 ± 0.1 0.80 ± 0.05 I Features • SS-mini type 3-pin package • Allowing high-density mounting • Anode common type 1 + 0.05 3 2 I Absolute Maximum Ratings Ta = 25°C Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Single Double Single Double Tj Tstg IFM VR VRM IF 30 30 30 20 150 110 125 −55 to +125 °C °C mA V V mA 0.60 − 0.03 + 0.05 0.44 0.44 + 0.05 0.88 − 0.
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