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MA3S795E Datasheet Silicon Epitaxial Planar Type

Manufacturer: Panasonic

Overview: Schottky Barrier Diodes (SBD) MA3S795E Silicon epitaxial planar type Unit : mm 0.28 ± 0.05 For switching circuits 1.60 − 0.03 0.80 0.80 0.51 0.51 0.80 1.60 ± 0.1 0.80 ± 0.05 • Extra-small (SS-mini type) package, allowing high-density mounting • Optimum for low voltage rectification because of its low VF (VF = 0.3 V or less at IF = 1 mA) • Optimum for high-frequency rectification because of its short reverse recovery time (trr) + 0.

Key Features

  • 1 3 2 0.28 ± 0.05 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) For switching circuits Peak forward current Forward current (DC) Single Double.
  • Single Double.
  • Tj Tstg IF Symbol VR VRM IFM Rating 30 30 150 110 30 20 125.
  • 55 to +125 °C °C mA Unit V V mA 0.60.
  • 0.03 0.44 0.44 + 0.05 1 : Anode 1 2 : Anode 2 3 : Carhode 1 Cathode 2 SS-Mini Type Package (3-pin) 0.88.
  • 0.03 Marking Symbol: M3D Internal Connection 1 3 2 Junction temperature.

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