Datasheet4U Logo Datasheet4U.com

MA3S795E - Silicon epitaxial planar type

Features

  • 1 3 2 0.28 ± 0.05 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) For switching circuits Peak forward current Forward current (DC) Single Double.
  • Single Double.
  • Tj Tstg IF Symbol VR VRM IFM Rating 30 30 150 110 30 20 125.
  • 55 to +125 °C °C mA Unit V V mA 0.60.
  • 0.03 0.44 0.44 + 0.05 1 : Anode 1 2 : Anode 2 3 : Carhode 1 Cathode 2 SS-Mini Type Package (3-pin) 0.88.
  • 0.03 Marking Symbol: M3D Internal Connection 1 3 2 Junction temperature.

📥 Download Datasheet

Datasheet Details

Part number MA3S795E
Manufacturer Panasonic
File Size 46.88 KB
Description Silicon epitaxial planar type
Datasheet download datasheet MA3S795E Datasheet

📁 Similar Datasheet

  • MA3000 - MA3000 (ETC)
  • MA3005 - MA3005 (ETC)
  • MA3006 - MA3006 (ETC)
  • MA3054 - Fast Transient Low Dropout Regulator (Major Power Technology)
  • MA3056 - Fast Transient Low Dropout Regulator (Major Power Technology)
  • MA3075WALT1 - Zener Transient Voltage Suppressor (ON)
  • MA3075WALT1D - Zener Transient Voltage Suppressor (ON)
  • MA3120 - Silicon planar type (Panasonic Semiconductor)
  • MA31750 - High Performance MIL-STD-1750 Microprocessor (Dynex)
  • MA31751 - Memory Management & Block Protection Unit (Dynex)
Other Datasheets by Panasonic
  • MA3S795E - Schottky Barrier Diodes (SBD)
  • MA3S795 - Silicon epitaxial planar type
  • MA3S795D - Schottky Barrier Diodes (SBD)
  • MA3S781 - Silicon epitaxial planar type
  • MA3S781D - Silicon epitaxial planar type
  • MA3S781E - Silicon epitaxial planar type (cathode common)
  • MA3S132A - Silicon epitaxial planar type Switching Diodes
  • MA3S132D - Silicon epitaxial planar type

Full PDF Text Transcription

Click to expand full text
Schottky Barrier Diodes (SBD) MA3S795E Silicon epitaxial planar type Unit : mm 0.28 ± 0.05 For switching circuits 1.60 − 0.03 0.80 0.80 0.51 0.51 0.80 1.60 ± 0.1 0.80 ± 0.05 • Extra-small (SS-mini type) package, allowing high-density mounting • Optimum for low voltage rectification because of its low VF (VF = 0.3 V or less at IF = 1 mA) • Optimum for high-frequency rectification because of its short reverse recovery time (trr) + 0.05 I Features 1 3 2 0.28 ± 0.05 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) For switching circuits Peak forward current Forward current (DC) Single Double* Single Double* Tj Tstg IF Symbol VR VRM IFM Rating 30 30 150 110 30 20 125 −55 to +125 °C °C mA Unit V V mA 0.60 − 0.03 0.44 0.44 + 0.
Published: |