Datasheet Summary
Transistor
Silicon NPN epitaxial planer type
For general amplification plementary to 2SB1218A
2.1±0.1
Unit: mm s Features q q q
1.25±0.1
High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
2.0±0.2
1.3±0.1
0.9±0.1
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings 60 50...
