Datasheet Summary
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Power Transistors
Silicon NPN triple diffusion planar type
Unit: mm
For power amplification
- Features
- Wide safe oeration area
- Satisfactory linearity of forward current transfer ratio hFE
- Low collector-emitter saturation voltage VCE(sat)
- Full-pack package which can be installed to the heat sink with one screw.
9.9±0.3
3.0±0.5
4.6±0.2 2.9±0.2
13.7±0.2 4.2±0.2 Solder Dip
15.0±0.5
φ 3.2±0.1
1.4±0.2 1.6±0.2 0.8±0.1
2.6±0.1
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