Datasheet Summary
Infrared Light Emitting Diodes
GaAs Infrared Light Emitting Diode
Unit : mm
Not soldered 2.0 max.
2-0.8 max. 2-0.5±0.1 0.5±0.1
For optical control systems Features
High-power output, high-efficiency : PO = 5 mW (typ.) Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ.) Good radiant power output linearity with respect to input current Long lifetime, high reliability ø3 plastic package
(1.5)
ø3.8±0.2 ø3.0±0.2
Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature
- Symbol PD IF IFP- VR Topr Tstg
Ratings 75 50 1 3
- 25 to +85
- 40 to +100
Unit mW mA A V ˚C...