Datasheet Summary
posite Transistors
Silicon N-channel junction FET
Unit: mm
For amplification of the low frequency
2.8 -0.3 0.65±0.15
+0.2 +0.25
1.5 -0.05 5
0.65±0.15 1
2.9 -0.05 q q
Two elements incorporated into one package. (Soure-coupled FETs) Reduction of the mounting area and assembly cost by one half.
1.9±0.1
+0.2
2 0.3 -0.05 0.4±0.2 0.16 -0.06
+0.1
1.1 -0.1 q
2SK198 × 2 elements
0.8 s Basic Part Number of Element
+0.2 s...