PMST5401 Datasheet | Philips Semiconductors

FEATURES - Low current (max. 300 m A) - High voltage (max. 150 V). APPLICATIONS - General purpose - Telephony. DESCRIPTION PNP high-voltage transistor in a SOT323 plastic package. NPN plements: PMST5550 and PMST5551. handbook, halfpage PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 1 MARKING TYPE NUMBER PMST5401 Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) 1 Top view 2 MAM048 ∗2L Fig.1 Simplified outline (SOT323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector - - - - - - - - 65 - - 65 MIN. MAX. - 160 - 150 - 5 - 300 - 600 - 100 200 +150 150 +150 V V V m A m A m A m W °C °C °C UNIT 1999 Apr 29 Philips Semiconductors Product specification PNP high-voltage transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO h FE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = - 120 V IE = 0; VCB = - 120 V; Tj = 150 °C IC = 0; VEB = - 4 V VCE = - 5 V; (see Fig.2) IC = - 1 m A IC = - 10 m A IC...