Patented Gold Metallized Silicon Gate Enhancement Mode Rf Power Vdmos Transistor
| Part number | P123 |
|---|---|
| Manufacturer | Polyfet RF Devices |
| File Size | 38.89 KB |
| Description | PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| Datasheet | P123_PolyfetRFDevices.pdf |
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Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
P123 | PASSIVATED ASSEMBLED CIRCUIT ELEMENTS | International Rectifier |
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P12347-01CT | Color/proximity sensor | Hamamatsu |
See all Polyfet RF Devices datasheets
| Part Number | Description |
|---|---|
| P121 | PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| P122 | PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| P124 | PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
