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PDC3903Z - P-Channel MOSFET

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • -30V,-50A, RDS(ON) =8.5mΩ@VGS = -10V.
  • Fast switching.
  • Green Device Available.
  • Suit for -4.5V Gate Drive.

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Datasheet preview – PDC3903Z

Datasheet Details

Part number PDC3903Z
Manufacturer Potens semiconductor
File Size 793.84 KB
Description P-Channel MOSFET
Datasheet download datasheet PDC3903Z Datasheet
Additional preview pages of the PDC3903Z datasheet.

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Full PDF Text Transcription

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30V P-Channel MOSFETs PDC3903Z General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. PPAK3x3 Pin Configuration DDDD S S SG G D S BVDSS -30V RDSON 8.5m ID -50A Features  -30V,-50A, RDS(ON) =8.5mΩ@VGS = -10V  Fast switching  Green Device Available  Suit for -4.
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