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PDC3906X - N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 30V,80A, RDS(ON) =5.5mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

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Datasheet preview – PDC3906X

Datasheet Details

Part number PDC3906X
Manufacturer Potens semiconductor
File Size 606.00 KB
Description N-Channel MOSFET
Datasheet download datasheet PDC3906X Datasheet
Additional preview pages of the PDC3906X datasheet.

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Full PDF Text Transcription

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30V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. PPAK5x6 Pin Configuration DDDD SSSG PDC3906X BVDSS 30V RDSON 5.5mΩ ID 80A Features  30V,80A, RDS(ON) =5.
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