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PDC3959X - P-Channel MOSFETs

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • -30V,-90A, RDS(ON) =4.5mΩ@VGS = -10V.
  • Fast switching.
  • Green Device Available.
  • Suit for -4.5V Gate Drive.

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Datasheet Details

Part number PDC3959X
Manufacturer Potens semiconductor
File Size 971.19 KB
Description P-Channel MOSFETs
Datasheet download datasheet PDC3959X Datasheet

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Full PDF Text Transcription

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30V P-Channel MOSFETs PDC3959X General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. PPAK5X6 Pin Configuration DDDD S S SG D S BVDSS -30V RDSON 4.5m ID -90A Features  -30V,-90A, RDS(ON) =4.5mΩ@VGS = -10V  Fast switching  Green Device Available  Suit for -4.
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