PDQ4912 - N-Channel MOSFETs

Potens semiconductor

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

40V,5A, RDS(ON) =35mΩ @VGS = 10V.
Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available.

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PDQ4912 n-channel mosfets by Potens semiconductor - Datasheet Preview

Datasheet Details

Part number	PDQ4912
Manufacturer	Potens semiconductor
File Size	440.98 KB
Description	N-Channel MOSFETs
Datasheet	PDQ4912 Datasheet

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Full PDF Text Transcription for PDQ4912 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PDQ4912. For precise diagrams, tables, and layout, please refer to the original PDF.

40V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has b...

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stors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.