PDQ4912 Datasheet | Potens semiconductor

40V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. SOT23-6 Pin Configuration DDS G BVDSS 40V RDSON 35m ID 5A Features - 40V,5A, RDS(ON) =35mΩ @VGS = 10V - Improved dv/dt capability - Fast switching - 100% EAS Guaranteed - Green Device Available Applications - MB / VGA / Vcore - Load Switch - Hand-Held...