PNMT6N1-LB
PNMT6N1-LB is Transistor manufactured by Prisemi.
Feature
This device is Pb-Free, Halogen Free/BFR Free and Ro HS pliant. PNMT6N1-LB is posed by a transistor and a MOSFET
Transistor:
- Very low collector to emitter saturation voltage
- DC current gain <100
- 3A continuous collector current
- PNP epitaxial planar silicon transistor
MOSFET:
VDS(V) 40
MOSFET Product Summary
RDS(on)(Ω)
VGS(th)(V)
4.5@ VGS=4V
0.6 to 1.5
ID(A) 0.18
PNMT6N1-LB Transistor with N-MOSFET
（E） 1
（B） 2 （D） 3
Top View
6 （C）
5（G） 4 （S）
（C）6 （G）5 （S）4
Bottom View
（C） （D）
1 （E） 2 （B） 3 （D）
- Transistor
Electrical characteristics per line@25℃( unless otherwise specified)
Parameter
Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter -Base Breakdown Voltage Collector Current Collector Peak Current Base Current Base Peak Current Total Dissipation @25°C Storage Temperature Max. Operating Junction Temperature Junction-to-Ambient Thermal Resistance(1)
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