PNMT6N2 Overview
Key Features
- Very low collector to emitter saturation voltage
- DC current gain >100
- 3A continuous collector current
- PNP epitaxial planar silicon transistor MOSFET: VDS(V) 40 MOSFET Product Summary RDS(on)(Ω) VGS(th)(V) 4.5@ VGS=4V 0.8 to 1.6 ID(A) 0.18
