| Part number | HYI39SC128160FE |
|---|---|
| Datasheet | HYI39SC128160FE_Qimonda.pdf |
| File Size | 1.15 MB |
| Manufacturer | Qimonda |
| Description | 128-MBit Synchronous DRAM |
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output circuits are synchronized with the positive edge of an externally supplied clock. Operating the four memory banks in an interleave fashion allows random access operation to occur at a higher rate than is possible with standard DRAMs. A sequential and gapless data rate is possible depending on burst length, CAS latency and speed grade of the device.
| Part Number | Description |
|---|---|
| HYI39SC128800FE | 128-MBit Synchronous DRAM |
| HYI39S128160F | 128-MBit Synchronous DRAM |
| HYI39S128800F | 128-MBit Synchronous DRAM |
| HYI39S512160A | 512-Mbit Synchronous DRAM |
| HYI39S512400A | 512-Mbit Synchronous DRAM |
| HYI39S512800A | 512-Mbit Synchronous DRAM |
| HYI18T1G160B | 1-Gbit Double-Data-Rate-Two SDRAM |
| HYI18T1G167B | 1-Gbit Double-Data-Rate-Two SDRAM |
| HYI18T1G400B | 1-Gbit Double-Data-Rate-Two SDRAM |
| HYI18T1G800B | 1-Gbit Double-Data-Rate-Two SDRAM |
