Full PDF Text Transcription for RCR1540ESJ (Reference)
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RCR1540ESJ. For precise diagrams, and layout, please refer to the original PDF.
® RCR15 P-Channel Enhancement Mode Field Effect Transistor z Features z Pin Configurations 40ESJ VDS (V) = -20V,ID = -4A RDS(ON)<55mΩ @ VGS= -4.5V RDS(ON)<63mΩ @ VGS= -2....
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(V) = -20V,ID = -4A RDS(ON)<55mΩ @ VGS= -4.5V RDS(ON)<63mΩ @ VGS= -2.5V RDS(ON)<83mΩ @ VGS= -1.8V SOT23-3L Package ESD Protected:3000V HBM z General Description The RCR1540ESJ uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. z Package Information z Absolute Maximum Ratings @TA=25℃ unless otherwise noted Parameter Sy mbol VDS VGS Ratings -20 ±8 Unit V V Drain-Source Voltage Gate-Source Voltage 1/5 YKKJPD-V3.1 http://www.Datasheet4U.
RCR1540ESJ Datasheet
