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SCS120KE2 - SiC Schottky Barrier Diode

Key Features

  • 1)Shorter recovery time 2)Reduced temperature dependence 3)High-speed switching possible 4.32 2.40 3.00 (1) (2) (3) 20.18.
  • Construction Silicon carbide epitaxial planer type 1.20 5.45 2.03 0.60 ROHM : ＴO-247 (Unit : mm) (1) Anode (2) Cathode (3) Anode.
  • Absolute maximum ratings (Tj=25°C) Parameter Symbol Limits Unit Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward forward current.
  • 6 Surge no repetitive forward current.
  • 6 Repetitive peak for.

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Datasheet Details

Part number SCS120KE2
Manufacturer ROHM
File Size 519.49 KB
Description SiC Schottky Barrier Diode
Datasheet download datasheet SCS120KE2 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SiC Schottky Barrier Diode SCS120KE2 . Applications General rectification Dimensions (Unit : mm) Case 15.90 1.98 5.03 Structure Case 5.62 6.17 3.61 3.81 20.95 Features 1)Shorter recovery time 2)Reduced temperature dependence 3)High-speed switching possible 4.32 2.40 3.00 (1) (2) (3) 20.18 Construction Silicon carbide epitaxial planer type 1.20 5.45 2.03 0.