1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible
lConstruction Silicon carbide epitaxial planer type
Data Sheet
lStructure
ROHM : TO-247
lAbsolute maximum ratings (Tj=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
Reverse voltage (DC) Continuous forward current.
6 Surge no repetitive forward current.
6 Repetitive peak forward current.
6 Total power disspation.
6 Junction temperature
VRM VR IF
IFSM
IFRM PD Tj
6.
Full PDF Text Transcription for SCS140AE2 (Reference)
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SiC Schottky Barrier Diode SCS140AE2 lApplications Switching power supply lDimensions (Unit : mm) lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) ...
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eatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lConstruction Silicon carbide epitaxial planer type Data Sheet lStructure ROHM : TO-247 lAbsolute maximum ratings (Tj=25°C) Parameter Symbol Limits Unit Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current*6 Surge no repetitive forward current*6 Repetitive peak forward current*6 Total power disspation*6 Junction temperature VRM VR IF IFSM IFRM PD Tj 600 600 20 / 40*1 76 / 152*2 300 / 600*3 72 / 121*4 120 / 210*5 175 V V A A A A W °C Range of storage temperature Tstg -55 to +175 °C Junction to cas
SCS140AE2 Datasheet
