Datasheet4U Logo Datasheet4U.com

RM150N100HD - N-Channel Super Trench Power MOSFET

General Description

The RM150N100HD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Key Features

  • VDS =100V,ID =150A RDS(ON).

📥 Download Datasheet

Datasheet Details

Part number RM150N100HD
Manufacturer Rectron
File Size 260.67 KB
Description N-Channel Super Trench Power MOSFET
Datasheet download datasheet RM150N100HD Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RM1500DC-66F HIGH VOLTAGE DIODE MODULES Mitsubishi
RM1500E High Voltage Silicon Rectifier MCC
RM150CZ-24 DIODE MODULES Mitsubishi Electric Semiconductor
RM150CZ-2H DIODE MODULES Mitsubishi Electric Semiconductor
RM150CZ-H DIODE MODULES Mitsubishi Electric Semiconductor

Other Datasheets by Rectron

Part Number Description
RM110N85T2 N-Channel Super Trench Power MOSFET
RM12N650IP N-Channel Super Junction Power MOSFET
RM12N650LD N-Channel Super Junction Power MOSFET
RM16P60LD 60V P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
RM150N100HD N-Channel Super Trench Power MOSFET Description The RM150N100HD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features VDS =100V,ID =150A RDS(ON) <4.