Datasheet Summary
N-Channel Super Trench Power MOSFET
Description
The RM150N100HD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.
General Features
VDS =100V,ID =150A RDS(ON) <4.2mΩ @ VGS=10V Excellent gate charge x RDS(on) product Very low on-resistance RDS(on) 175 °C operating temperature Pb-free lead plating 100% UIS tested
Schematic diagram TO-263-2L top view
Application
DC/DC Converter Ideal for high-frequency switching...