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RM16P60LD - 60V P-Channel MOSFET

General Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • z -60V, -16A, RDS(ON) =48mȍ#9.
  • 6 z Improved dv/dt capability z Fast switching z 100% EAS Guaranteed z Green Device Available -10V.

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Datasheet Details

Part number RM16P60LD
Manufacturer Rectron
File Size 231.09 KB
Description 60V P-Channel MOSFET
Datasheet download datasheet RM16P60LD Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RM16P60LD 60V P-Channel MOSFETs General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO252 Pin Configuration D BVDSS -60V RDSON 48m: ID -16A Features z -60V, -16A, RDS(ON) =48mȍ#9*6 z Improved dv/dt capability z Fast switching z 100% EAS Guaranteed z Green Device Available -10V Applications D z Motor Drive z Power Tools G z LED Lighting S z P/N suffix V means AEC-Q101qualified, e.